Pd/Ru metallization scheme is fabricated on n-GaN as a Schottky contact, and the electrical and structural properties have been investigated as a function of annealing temperature by current-voltage (I-V), capacitance-voltage (C-V), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) measurements. As-deposited Ru/Pd/n-GaN contact yielded Schottky barrier height (SBH) of 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Further, it is observed that the Schottky barrier height increases to 0.80 eV (I-V) and 0.96 eV (C-V) for the contact annealed at 300 degrees C. However, both I-V and C-V measurements indicate that the barrier height slightly decreased when the contacts are annealed at 400 degrees C and 500 degrees C. From the above observations, the optimum annealing temperature for Pd/Ru Schottky contact is 300 degrees C. Norde method is also employed to extract the barrier height of Pd/Ru Schottky contacts which are in good agreement with those obtained by the I-V technique. X-ray photoelectron spectroscopy results shows that the Ga 2p core-level shift towards the low-energy side for the contact annealed at 300 degrees C compared to the as-deposited contact. Based on the XPS and XRD results, the reason for the increase in SBH upon annealing at 300 degrees C could be attributed to the formation of gallide phases at the Ru/Pd/n-GaN interface vicinity. The AFM results showed that the overall surface morphology of the Pd/Ru Schottky contacts on n-GaN is fairly smooth. The above observations reveal that the Pd/Ru Schottky contact is attractive for high-temperature device applications. (C) 2011 Elsevier B.V. All rights reserved.