A room temperature spraying method which reduces the liquid chemical to an aerosol of submicron size droplets was used to deposit B, F-ZnO (precursor: B = 0.02, 0 <= F <= 0.1) thin films. X-ray diffraction studies demonstrate that B, F-ZnO (precursor: B = 0.02, 0 <= F <= 0.1) thin films have a wurtzite crystal structure. All XRD peaks have shifted higher angle and the crystal orientation was changed at certain amount of fluorine (>6 at%) in precursor solution. Analysis of X-ray diffraction patterns and X-ray photoelectron spectra revealed that fluorine which was combined with zinc atom (F-Zn) was successfully doped into the ZnO crystal lattice. Analogously to these studies, the scanning electron micrographs show that the grain size tends to decrease. The optimal result of the B, F-ZnO (precursor: B = 0.02, 0 <= F <= 0.1) films was obtained at B = 0.02, F = 0.06, with a low resistivity level of about 0.17 x 10(-3) Omega cm and a high transmittance of 90% in the visible light spectrum (300-800 nm). We propose that the substitution of boron and fluorine in the ZnO lattice has positive effects in terms of increasing the free electron concentration and density of thin film. These results can be improved the optical and electrical properties. (C) 2011 Elsevier B.V. All rights reserved.