InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AIN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors. (c) 2012 Elsevier B.V. All rights reserved.