The LKE (Linear Kink Effect) and BGI (Back-Gate-Induced) Lorentzians present in the drain current noise spectra of fully-depleted tri-gate n- and pFinFETs, fabricated on sSOI and SOI substrates with HfSiON/SiO2 gate dielectric are described. It is shown that the analysis of the parameters of LKE and BGI Lorentzians allows to find the values of (C-eq/m'beta(2)), beta and [j(EVB)/(m'beta)(2)] where C-eq is the body-source capacitance, m' approximate to 1, beta is the body factor and j(EVB) is the density of the EVB current flowing through the gate dielectric. As a result, the following effects were observed for the first time: (i) (C-eq/m'beta(2)) decreases with increasing gate overdrive voltage vertical bar V*vertical bar and depends sub-linearly on the effective fin width W-eff under strong inversion conditions; (ii) in depletion and weak inversion where (C-eq/beta(2)) is independent of vertical bar V*vertical bar the proportionality (C-eq/beta(2)) alpha W-eff is observed for an effective width W-eff >= 0.87 mu m while (C-eq/beta(2)) becomes independent on W-eff for W-eff < 0.871 mu m; (iii) the value of beta for the FinFETs investigated is higher than for their planar counterparts; (iv) in spite of the fact that strain affects the barrier height at the Si/SiO2 interface, the EVB current densities j(EVB) for sSOI and SOI devices are equal; (v) the values of j(EVB) for the HfSiON/SiO2 devices are much higher than for the HfO2/SiO2-ones studied previously. It is also shown that the gate overdrive voltage vertical bar V*vertical bar at which the LKE Lorentzians start to appear is as low as 0.25 V. (C) 2011 Elsevier Ltd. All rights reserved.