화학공학소재연구정보센터
Solid-State Electronics, Vol.63, No.1, 55-59, 2011
Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress
This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77 K to 400 K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress. (C) 2011 Elsevier Ltd. All rights reserved.