Organic complementary inverters and ring oscillators based on polyelectrolyte-gated thin-film transistors are demonstrated. Detrimental electrochemical doping is suppressed by using polyanionic and polycationic gate insulators in the p- and n-channel transistors, respectively. The circuits operate at supply voltages between 0.2 V and 1.5 V, have a static power consumption of less than 2.5 nW per logic gate and show propagation delays down to 0.26 ms per stage.