Advanced Materials, Vol.23, No.48, 5755-5755, 2011
Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch-2
The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2).
Keywords:directed self-assembly;block copolymers;solvent annealing;chemical pattern;bit-pattern media