Advanced Materials, Vol.24, No.6, 834-834, 2012
Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
Transfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (similar to 300 degrees C), which is applicable to flexible plastic substrates.
Keywords:solution-processed zinc oxide;alkali metal doping;thin-film transistors;operational stability;gate dielectrics