High-Performance n-type Organic Semiconductors: Incorporating Specific Electron-Withdrawing Motifs to Achieve Tight Molecular Stacking and Optimized Energy Levels

Yun SW; Kim JH; Shin S; Yang H; An BK; Yang L; Park SY

Advanced Materials, Vol.24, No.7, 911-911, 2012

DOI10.1002/adma.201103978 Export Citation

High-Performance n-type Organic Semiconductors: Incorporating Specific Electron-Withdrawing Motifs to Achieve Tight Molecular Stacking and Optimized Energy Levels

Yun SW, Kim JH, Shin S, Yang H, An BK, Yang L, Park SY

Novel pi-conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic fi eldeffect transistor (OFET) properties with electron mobilities as high as 2.14 cm(2) V(-1)s(-1) and on-off current ratios > 10(6).

Keywords:n-type organic semiconductor;molecular stacking;orgnic field-effect transistors