Previous Article Next Article Table of Contents Advanced Materials, Vol.24, No.30, 4163-4169, 2012 DOI10.1002/adma.201104476 Export Citation Ferroelectric Tunnel Junction Memory Devices made from Monolayers of Vinylidene Fluoride Oligomers Kusuma DY, Lee PS Keywords:VDF oligomer;organic ferroelectric;monolayer film;resistive switching;memory device Please enable JavaScript to view the comments powered by Disqus.
