BiFeO3/Zn1-xMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1-xMnxO. BiFeO3/Zn1-xMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P(r) similar to 121.0-130.6 mu C/cm(2) was measured for BiFeO3/Zn1-xMnxO. BiFeO3/Zn1-xMnxO (x = 0.04) bilayer exhibits a highest M-s value of similar to 15.2 emu/cm(3), owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced M-s value. (C) 2011 Elsevier B.V. All rights reserved.