We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC: H thin films with typical thickness of 1 mu m were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications. (C) 2012 Elsevier B. V. All rights reserved.