The thermal stability of amorphous Si2C films was studied by means of X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES), Grazing Incidence X-ray Diffractometry (GIXRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The films were deposited by magnetron sputtering onto silicon single crystals. The as-deposited films show a homogenous amorphous structure with a variety of bonding states reaching from homonuclear silicon-like Si-Si over mixed Si-Si-C to heteronuclear Si-C bonds. Annealing at 800 degrees C for 1 h leads to a depletion of Si-Si-C bonding states and to the formation of additional Si-C bonds. AFM and SEM images showed particles with a remarkable faceting on the surface of the annealed film. In accordance with GIXRD and AES measurements, these observations confirmed the crystallization of silicon during thermal annealing. Besides, no crystallized silicon carbide could be detected. (C) 2012 Elsevier B.V. All rights reserved.