ZnO:Ga thin films were deposited by DC magnetron sputtering using two facing Ga-doped ZnO ceramic targets at room temperature. Polyethylene naphthalate (PEN) and Eagle2000 glass were used as substrates. The influence of PEN and glass substrates on the properties of ZnO:Ga thin films has been investigated. The distance between substrate and plasma dependence of micro-structure and electrical properties was also studied. The lowest resistivity obtained was 6.65 x 10(-4) Omega cm with a Hall mobility of 17.1 cm(2) V-1 s(-1) and a carrier concentration of 5.5 x 10(20) cm(-3). When those ZnO: Ga thin films were applied to low-temperature flexible a-Si: H solar cells, an initial conversion efficiency of 5.91% was achieved. (C) 2011 Elsevier B.V. All rights reserved.