Low-temperature Al-induced crystallization of hydrogenated amorphous Ge films has been investigated by X-ray diffraction, Raman spectra, scanning electron microscopy, atomic force microscopy and sheet resistance measurements using a four-point probe. By investigation of the influence of the annealing temperature on the microstructures, morphologies and electrical properties of the Ge thin films. It can be seen that the Al-induced layer exchange significantly promotes the crystallization of the amorphous Ge thin films at 250 degrees C. And there is an enhancement in film crystallinity and grain size with the increasing of the annealing temperature. Also, it can be seen that the crystallized films have the rough surface. The low-frequency shifts of Ge-Ge TO peaks were found with the increasing of the annealing temperature. In addition, the sheet resistance was decreased significantly with the increasing of the grain size. The minimum resistance of 213 Omega/square in poly-Ge thin film was obtained after annealing at 350 degrees C for 3 h. (C) 2012 Elsevier B.V. All rights reserved.