Ag-N dual-doped p-type ZnO (ZnO:(Ag,N)) thin films have been prepared using the sol-gel method. The modifications of the structural, electrical and optical properties of ZnO:(Ag,N) films after annealing in various atmosphere in the temperature range of 300-600 degrees C are discussed. Results show the oxygen-rich environment is benefit to the p-type samples. Transition from n-type to p-type conduction occurred at the annealing temperature of 400 degrees C. The optimum annealing temperature is about 500 degrees C. (C) 2012 Elsevier B.V. All rights reserved.