A dielectric barrier discharge of N-2:CH4 mixture was operated at 500 mbar was employed to deposit poly-amide (HCNx) film, under low input power and atmospheric pressure. The top surface layer of amorphous hydrogenated carbon nitride (a-HCNx) is analyzed by X-ray photoelectron spectroscopy (XPS). Bulk a-HCNx is analyzed by means of fourier transform infrared (FTIR) spectroscopy. The deposited polymer having triple bond (-C N/-C C-) at similar to 2180 cm(-1) and carbonyl-amide group -(C=O)NH- at similar to 1680 cm(-1), were synthesized by FTIR spectroscopy to elucidate the nature of the products formed from N-2/CH4 mixture. The nitrile group (-C N/-) is decreasing with the elevated annealing temperature is obtained from FTIR spectrum. Shake-up satellite peaks are observed in XPS spectrum at room temperature. The shake-up peaks disappear gradually as the annealing temperature is increased from 50 to 300 degrees C. Simultaneously, the chemical shift of 1s electron shifted to its own advantageous position. The surface roughness (Root Mean Square, RMS) of the HCNx film is changing from 5.3 to 28.2 nm as the annealing temperature increases from room temperature to 300 degrees C.