화학공학소재연구정보센터
Journal of Crystal Growth, Vol.352, No.1, 35-38, 2012
Scintillation properties of Ce doped Gd2Lu1(Ga,Al)(5)O-12 single crystal grown by the micro-pulling-down method
Ce:Gd2Lu1(Ga,Al)(5)O-12 single crystals were grown by the micro-pulling down (mu-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530 nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Cel%: Gd2Lu1Ga3Al2O12 shows the highest emission intensity. The light yield of Ce:Gd2Lu1Ga3Al2O12 sample with 3 mm phi x 1 mm size was around 22,000 photon/MeV using calibration from Fe-55 direct irradiation peak to APD. Scintillation decay time was around 50 ns. The theoretical density is 6.88 g/cm(3). (C) 2012 Elsevier B.V. All rights reserved.