Sputtered deposited thin films of AlN:Pr and GaN:Pr emit in ultraviolet-visible and visible regions of the spectrum, respectively, under electron excitation in cathodoluminescence apparatus. The goal is to study the ultraviolet emission from Pr+3 when doped in nitride semiconductor hosts. Luminescence peaks at a wavelength of 295 nm (4.2 eV), 335 nm (3.7 eV) and 385 rim (3.24 eV) are observed as a result from S-1(0) -> G(4), S-1(0) -> D-1(2), and S-1(0) -> I-1(6) transitions, respectively. However the S-1(0) -> (1)G(4) and S-1(0) -> D-1(2) transitions are not observed when Pr+3 is doped in GaN host. The bandgap of GaN absorbs the ultraviolet radiation emitted from Pr+3 and hence GaN can be used as ultraviolet filter for radiation shielding and protection purposes. AlN is transparent to ultraviolet due to its wide bandgap of 6.2 eV. (C) 2008 Elsevier B.V. All rights reserved.