Resistivity and surface morphology of Ru films have been investigated after Rapid Thermal Processing (RTP) at 400-700 degrees C and conventional long-time anneal (LTA) at 300-500 degrees C. Films were grown on sub-nanometer-thick Pt-Pd alloy seed layer in a surface selective growth region at 110-185 degrees C using tricarbonyl{eta(4)-cyclohexa-1,3-diene}ruthenium, ammonia, nitrous oxide, hydrogen, and pulsed chemical vapor deposition conditions. Film morphology was stable up to 600 degrees C RTP, revealing surface agglomerates at 700 degrees C. The resistivity dropped to stable values after similar to 10 min of LTA, revealing film shrinkage up to 50% and cracks at 1 h of 300-500 degrees C LTA. Both anneal types produced Ru film resistivity similar to <= 640 mu Omega cm. (C) 2009 Elsevier B.V. All rights reserved.