Ni/n-type 6H-SiC Schottky barrier diode (SBD) has been characterized by the capacitance-voltage (C-V) technique as a function of temperature (120-500 K). The barrier height (BH) was determined as 1.36 eV at the temperature of 300 K and frequency of 50 kHz from C-V measurements, respectively. The BH for the Ni/n-type 6H-SiC does not exhibit temperature dependence between 260 and 500 K, while it changes slightly with decreasing temperature between 120 and 240 K. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in Ni/n-type 6H-SiC SBD. The four electron trap centers to be present at temperatures 120, 200, 350 and 415 K have been realized. The origin of these defects has been decided to be intrinsic nature and it has been found the Correlation between C-V and DLTS measurements quite interesting. (C) 2009 Elsevier B.V. All rights reserved.