The aim of this work was to study the influence of selenization temperature on the morphological and structural properties of Culn(1-x)Ga(x)Se(2) (CIGS) polycrystalline thin films prepared by a two-step method. The compound and metallic precursors were deposited sequentially using GaSe, InSe and Cu sources by thermal evaporation. These identical InSe/Cu/GaSe precursors are then selenized with Se vapor in a vacuum system. All the CIGS films showed chalcopyrite structure and presence of secondary phases observed at low temperatures. High temperature treatment led to better crystalline and an increase in grain size. Solar cell devices are fabricated and J-V measurements performed under AM 1.5 global solar spectra conditions at 25 degrees C are presented. (C) 2009 Elsevier B.V. All rights reserved.