To improve the breakdown voltage, we propose a SOI-based LDMOSFET with a trench structure in the drift region. Due to the trench oxide and underneath boron implanted layer, the surface electric field in the drift region effectively reduced. These effects resulted in the increment of breakdown voltage for the trenched LDMOS more than 100 V compared with the conventional device. However, the specific on-resistance, which has a trade-off relationship, is slightly increased. In addition to the trench oxide on the device performance, we also investigated the influence of n- drift to n+ drain junction spacing on the off-state breakdown voltage. The measured breakdown voltages were varied more than 50 V with different n- to n+ design spaces and achieved a maximum value at L(DA) = 2.0 mu m. Moreover, the influence of field plate on the breakdown voltage of trench LDMOSFET was investigated. It is found that the optimum drain field plate over the field oxide is 8 mu m. (C) 2009 Elsevier B.V. All rights reserved.