화학공학소재연구정보센터
Current Applied Physics, Vol.10, No.3, 880-885, 2010
Annealing temperature dependent on structural, optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method
In the present work the influence of annealing temperature on the structural and optical properties of the In(2)O(3) films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 degrees C in air. The chemical compositions of In(2)O(3) films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index (n), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250-1000 nm by UV-vis-spectrometer. The optical band gap of In(2)O(3) film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature. (C) 2009 Elsevier B. V. All rights reserved.