High speed deposition method was investigated by a high density plasma assisted sputtering source (HiPASS). The HiPASS used a hollow cathode discharge (HCD) gun (maximum current: 60 A) as a high density plasma source. The extracted high density plasma from the HCD gun was transported to the magnetron sputtering region by a magnetic field. In the magnetron sputtering discharge, the transported plasma reduced a breakdown voltage and increased a discharge current about 20%. Also the transported plasma excited the sputtered particles effectively. The additional excitation of the sputtered particles increased Mg deposition rate from 70 nm/min to 130 nm/min and from 32 nm/min to 118 nm/min when a distance between the sputtering target and substrate was 250 mm and 350 mm, respectively. Abroad plasma transport near the magnetron sputtering cathode was important to enhance the deposition rate. (C) 2011 Elsevier B. V. All rights reserved.