화학공학소재연구정보센터
Current Applied Physics, Vol.11, No.5, 1222-1227, 2011
Excitations in doped quantum dot induced by randomly fluctuating confinement potential: Influence of impurity
We explore the excitation profile of a repulsive impurity doped quantum dot. The dopant impurity potential chosen assumes Gaussian form. The quantum dot is subject to a randomly fluctuating confinement potential. The investigation reveals the interplay between the impurity strength, impurity location, and impurity domain to modulate the excitation rate. Owing to the interplay we encounter enhancement as well as depletion in the excitation rate as several impurity parameters are varied over a range. Phase space contours are often invoked to rationalize the findings. (C) 2011 Elsevier B.V. All rights reserved.