| 98 |
Observation of resistive switching properties in Sb2Se3 through morphological manipulation.
양지웅, 정윤성, 이상한
한국재료학회 2021년 가을 학술대회 |
| 97 |
Ferroelectric HfZrO Film Enabling Non-Volatile Memory Cell in the Amorphous Indium Gallium Zinc Oxide Semiconductor
박주휘, 정재경
한국재료학회 2020년 봄 학술대회 |
| 96 |
Enhanced Charge Injection and Electric Field Using Structure Electrodes to Effectively Operate Polyimide-Based Resistive Memory
최한형, 김현진, 조재영, 박종혁
한국고분자학회 2019년 봄 학술대회 |
| 95 |
High endurance and reliable multi-bit operation in a Ta2O5 based resistive switching device
Min Kyu Yang
한국재료학회 2019년 가을 학술대회 |
| 94 |
Effect of additives on FACsPbI3 Perovskite in respect of Memristor characteristic
In-Hyuk Im, Do Yeon Heo, Ho Won Jang
한국재료학회 2019년 가을 학술대회 |
| 93 |
Low-energy and highly reliable multi-bit in a HfO2-based resistive switching device
Gun Hwan Kim
한국재료학회 2019년 봄 학술대회 |
| 92 |
Low current, Self-current-compliance and multi-bit operation in Ti doped Al2O3 RS layer.
Kanghyeok Jeon, Gun Hwan Kim
한국재료학회 2019년 봄 학술대회 |
| 91 |
Highly reliable and low-energy operation by “Erase-free” based multi-bit performance in a HfO2 resistive switching device
Jin joo Ryu, Chunjoong Kim, Gun Hwan Kim
한국재료학회 2019년 봄 학술대회 |
| 90 |
Low-Voltage Operating Bi-Polar Non-Volatile Transistor Memory by Charge Injection Engineering of Organic Semiconductors
문지훈, 백강준
한국고분자학회 2018년 가을 학술대회 |
| 89 |
Aluminium Oxide Based Resistive Random Access Memory for Neuromorphic Devices
김지연, 권기현, 김동원, 진수민, 김혜지, 양훈모, 박재근
한국재료학회 2018년 가을 학술대회 |
