화학공학소재연구정보센터
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2 Effect of Strain and Band Offset on Memory Margin of Capacitor-less Memory-cell on Strained Si on Relaxed SiGe Layer-on-insulator
Seung-Hyun Song, Du-Yeong Lee, Sung-Gwang Kim, Tae-Hyun Kim, Okuyama Ryosuke, Tae-Hun Shim, Jae-Gun Park
한국재료학회 2011년 가을 학술대회
1 Design of 45 nm Silicon-on-insulator (SOI) n-metal―oxide―semiconductor Field-effect Transistor (MOSFET) Floating Body Cell (FBC) for Optimal Memory Characteristics
Jin-Woo Choi, Young-Hwan Ryu, Seong-Je Kim, Tae-Hun Shim, Jea-Gun Park
한국재료학회 2008년 봄 학술대회