| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Enhanced optoelectronic properties of multilayer MoSe2 phototransistors |
| 초록 |
Unlike graphene, the existence of bandgaps in transition metal dichalcogenides such as MoSe2 offers an attractive possibility of using single layer MoSe2 field-effect transistors (FETs) in low-power switching devices and photodetectors. Yet, the fabrication demands and the physics of MoSe2, among other reasons, suggest that multilayer MoSe2 may be more attractive than single layer MoSe2 for FET applications in a thin-film transistor configuration. In this presentation, we explore the optoelectronic properties of bottom-gate multilayer MoSe2 phototransistors fabricated on SiO2/Si substrates with mechanically exfoliated flakes. Our MoSe2 phototransistors exhibit decent field-effect mobilities (＞ 20 cm2V-1s-1), high on/off-current ratio (＞105), and high photoresponsivity (＞ 200 AW-1) at room temperature. These results demonstrate a compelling case of multilayer MoSe2 phototransistors for applications in photodetectors. |
| 저자 |
Hyejoo Lee1, Seong Yeoul Kim2, Woong Choi3
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| 소속 |
1School of Advanced Materials Engineering, 2Kookmin Univ., 3Seoul 02707 |
| 키워드 |
<P>2D materials; optoelectronic; phototransistor; molybdenum diselenide</P>
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| E-Mail |
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