| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | Formation of Single-Phase Tin Sulfide Absorber Layer by Vapor Transport Deposition |
| 초록 | Tin sulfide(SnS) is a good candidate absorber layer for thin film photovoltaics. It has an optical band gap of between 1.2 eV and 1.5 eV and relatively earth abundant, non-toxic material. But till date, efficiencies obtained from SnS based solar cells are relatively low compared to its theoretical limit of ~32%. In order to improve the efficiency, it is important to improve the crystallinity by depositing pure single-phase thin film. In our study, SnS thin films were prepared by vapor transport deposition. The effect of deposition temperature, Ar pressure, and growth duration on the properties of SnS have been studied. The characteristics of SnS thin films were investigated through scanning electron microscopy. A change in morphology of the SnS was observed with the increasing deposition temperature. Further detailed analysis using X-ray diffraction and Raman spectroscopy will be dealt in our presentation. |
| 저자 | 이다정1, 허재영2 |
| 소속 | 1Department of Materials Science and Engineering, 2and Optoelectronics Convergence Research Center |
| 키워드 | <P>Tin sulfide(SnS); Solar cell; Absorber layer; Vapor transport deposition</P> |
