| 학회 |
한국재료학회 |
| 학술대회 |
2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 |
22권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 |
| 초록 |
We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power ultraviolet/ozone treatment increased surface energy allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal-oxide-semiconductor capacitors indicated n-type MoS2 with the electron density of ~1017 cm-3 and the minimum interface trap density of ~1011 cm-2eV-1. These results demonstrate the possibility of forming high-quality Al2O3-MoS2 interface by proper ultraviolet/ozone treatment providing important implications for their integration into field-effect transistors. |
| 저자 |
박선영1, 최유라1, 김명준2, 신현정2, 김지영3, 최웅1
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| 소속 |
1국민대, 2성균관대, 3Univ. of Texas at Dallas |
| 키워드 |
<P>Transition metal dichalcogenides; MoS<SUB>2</SUB>; Atomic layer deposition; High-k dielectric; Ultraviolet/Ozone treatment; Interface property</P>
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| E-Mail |
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