| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Ohmic contact to SnS thin films using metal substrate as a back electrode |
| 초록 | Tin monosulfide (SnS) is a IV-VI group misfit double layered p-type semiconductor. It has a direct optical band gap between 1 and 2 eV with a high absorption coefficient (＞104 cm-1) at above the absorption edge. Due to its physical and chemical properties, SnS has been a potential candidate for various device application such as cost-effective photovoltaic devices, photodetectors, lithium betteries, and semiconductor sensors. In this regard, there are many studies on synthesis and characterization of SnS thin films. However, there are several technological challenges in the fabrication of efficient devices. One of them is selection of compatible electrode matrerial having low-resistive Ohmic contacts to SnS films. In addition, device applications in optoelectronics need to select a suitable substrate material. Metals can be applied as a substrate material and back electrode simultaneously. To explore the effects of metal substrates as a back electrode, M/SnS/M structures are fabricated and W, Mo, and Ti are selected as metal substrate whose work function (Øm) is closer to SnS work function (Øs=4.37 eV). In this study, metals were deposited on the Si/SiO2 (285 nm oxidized) with thickness of 150nm by using sputter and e-beam evaporator. Then, SnS thin films were deposited at a substrate temperature of 240 ℃ with a thickness and a low growth rate of 200 nm and ~1.5 Å/s. Preferred orientations of SnS films on the metal substrates were examined using X-ray diffraction (XRD). Scanning electron microscope (SEM) and atomic force microscope (AFM) were used to analyze the topology and morphology of the films. Again, metals were deposited on the SnS films and current (I) versus voltage (V) characteristics of M/SnS/M were measured to by the probe station (two probe) under dark condition. Band structure of SnS film was examined by using UV-visible and ultraviolet photoelectron spectroscopy (UPS), and electrical properties were examined by the Hall-effect measurements. |
| 저자 | 방민욱, 전형탁 |
| 소속 | 한양대 |
| 키워드 | <P>Ohmic contact; SnS; metal substrate; back electrode</P> |
