| 학회 |
한국재료학회 |
| 학술대회 |
2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 |
27권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
The Formation Mechanism for Printed Silver-Contacts of Silicon Solar Cells using the Current Injection |
| 초록 |
The electrodes of Si solar cells are formed via screen printing using metal paste for mass production. Firing, a high-temperature (＜ 800℃) annealing process, is conducted for sintering metal particles and etching the passivation layer. In our previous report, we proposed a method for reducing this contact resistance from 5 mΩ∙cm2 to 1 mΩ∙cm2 by applying a current during the firing of a phosphorous-doped n+ emitter in an p-type Si wafer without a SiNx passivation layer. According to the results, applying a current during the firing process of Si solar cells is expected to reduce the required firing temperature. In the present study, a current (3A) was applied between the screen-printed electrode and phosphorus-doped n+ emitter in a p-type Si wafer with a SiNx passivation layer during a low-temperature firing process from 350 ℃ to 600 ℃. Given that the major effects of the proposed methods are the reduced contact resistance with the promoting the SiNx etching reaction. Cross-sectional scanning electron microscopy images at different firing temperatures demonstrated that current injection during firing promoted the etching of the SiNx layer. Ultimately, a solar cell efficiency of 19.0% similar to that of a reference sample fired at a higher temperature was obtained using the proposed method. |
| 저자 |
최동진1, 박현정1, 심명섭1, 배수현2, 김동환1, 이해석3, 강윤묵3
|
| 소속 |
1고려대, 2한국과학기술(연), 3KU-KIST 에너지환경대 |
| 키워드 |
Silicon solar cells; Metallization; Current injection; Low-temperature; Screen-printed Ag contact
|
| E-Mail |
|
