| 초록 |
Photoacid generators (PAGs) have been widely used as a key component in the improvement of photoresist performance. A novel monomer having a triphenylsulfonium triflate(TPSMA) moiety as a PAG was synthesized and copolymerized with methyl methacylate (MMA) for electron beam lithography. Poly(MMA-TPSMA) were characterized to render high thermal stability, high resolution, and sensitivity and successfully applied for fabrication of nano-scale patterns. Those were employed in order to improve the electron beam lithographic performance such as sensitivity, line edge roughness (LER) and resolution. The resist was capable of a half-pitch of 16 nm with a good LER in a 1200 μC㎝-2 dose at 100 keV acceleration voltage. |
