| 초록 |
Inorganic passivation layers for OLEDs generally show better barrier property than organic barrier film. However, because most of inorganic barrier coating processes are based on plasma process such as PECVD and sputtering, underlying organic devices are exposed to reactive plasma. And this exposure induced somewhat degraded performance of organic electronic device. In this research, we deposited silicon monoxide interlayer between organic electronic device and sputter deposited aluminum oxide barrier film as a protective layer. By incorporation silicon monoxide, reduced surface pike peaks which induced defects in barrier film and improved plasma resistance property have been observed. As a result, barrier film property with silicon monoxide interlayer also enhanced over five times compared with no-interlayer barrier film. |
