| 학회 | 한국재료학회 |
| 학술대회 | 2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 | 19권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Structural and electrical properties of Cu(In0.7Ga0.3)Se2 thin film prepared by sputtering or evaporation process of (In,Ga)2Se3 precursor |
| 초록 | The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. And co-evaporation process called three-stage process, is the most sucessful technique for the deposition of the CIGS layer. For selenization process, Conventionally, alloyed or stacked Cu-In-Ga metal precursor is deposited by sputtering, and it is followed by selenization process. But there are adhesion and void problem from CIGS/Mo interface. In this study we focused on CIGS/Mo interface and CIGS morphology. Cu(In0.7Ga0.3)Se2 thin film was prepared by selenization process of Cu/(In,Ga)2Se3 precursor. Precursors were prepared on Mo-deposited soda-lime glass substrate. First, (In,Ga)2Se3 layer was deposited by sputtering or evaporation process. Sequently Cu was deposited on the (In,Ga)2Se3 layer by sputtering. This precursor was reacted with elemental In, Ga, Se supplied by vacuum evaporation for Ga composition profile. Ga/(In+Ga) and Cu/(In+Ga)ratios were fixed at 0.2~0.3 and 0.8~0.9 respectively. The selenized film was investigated by SEM, XRD, AES depth profile. The void in the CIGS/Mo interface is decreased compared with CIGS thin film prepared by sputtering Cu-In-Ga metallic precursor in all case of (In,Ga)2Se3 by sputtering or evaporation. |
| 저자 | 정광선, 김승태, 권혁상, 안병태 |
| 소속 | 한국과학기술원 |
| 키워드 | CIGS; interface; void |
