화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터)
권호 42권 1호
발표분야 분자전자 부문위원회 I
제목 Synthesis and Thin Film Properties of Novel Crosslinked Polyimide Gate Insulators for Thin Film Transistor with Ultra-Low Leakage Current Density
초록 The hydroxyl group containing polyimides (6FDA-6FHAB and DOCDA-6FHAB) were successfully synthesized with a simple one step condensation polymerization using the monomers, 5,5'-(perfluoropropane-2,2-diyl)diisobenzofuran-1,3-dione (6FDA), 5-(2,5-dioxytetrahydrofuryl)3-methly-3-cylohexene-1-2-dicarboxylic anhydride (DOCDA), and 5,5'-(perfluoro propane-2,2-diyl)bis(2-aminophenol) (6FHAB). Synthesized polyimides were further crosslinked with a poly(melamine-co-formaldehyde) as cross-linking agent. Thin film properties of novel crosslinked polyimides were systematically characterized such as surface roughness, surface energy, and capacitance, etc. Thin films of the crosslinked 6FDA-6FHAB and DOCDA-6FHAB showed good surface roughness as root mean square value as about 0.133 and 0.229 nm in AFM measurement. In addition, the leakage current densities and breakdown voltages of crosslinked-6FDA-6FHAB and crosslinked-DOCDA-6FHAB were found to be less than 1x10-10 A/cm2 at 90 V and above 3MV/cm.
저자 기경민, 안 택
소속 경성대
키워드 Gate Insulater
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