| 초록 |
CNTs are promising material for high performance, large area printable thin film transistor. However, produced SWNTs (Single-walled CNTs) show non-uniform electrical properties. Selective sorting of s-SWNTs (semiconducting SWNTs) using polymer increase considerably with the aim of utilizing their superior properties. We sorted s-SWNTs with the high purity from as-grown mixed-type SWNTs using in conjugated polymer with long alkyl side-chain. Sorted s-SWNTs with dopant is adapted for active layer. We adopted salt dopants with halogen anions for n-type unipolar operation. We have demonstrated CNTFETs with s-SWNT/ dopant layer for higher n-type majority carrier density and forming suitable energy level by spin coating. s-SWNTs are non-covalently bonded with halogen ions, and the doping degree according to each anions was also different. We conducted comparative analysis of the doping effects through electrical and optical methods such as UV-VIS-NIR, UPS and Raman spectroscopy. |
