| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Variability of Metal Contact Properties Between Titanium and Multilayer MoS2 |
| 초록 | Recently, there is a great interest in transition metal dichalcogenides (TMDs) such as MoS2 because of their interesting electronic and optical properties.1 However, high performance MoS2 thin-film transistors (TFTs) require the formation of low-resistivity metal-MoS2 junctions since non-ideal electric contacts formed on MoS2 can fundamentally hamper any attempts to improve transistor performance.2,3 The understanding of metal-MoS2 junctions is further complicated as electronic properties of naturally-occurring MoS2 can be variable.4 In this paper, we fabricated bottom-gated TFTs based on mechanically exfoliated MoS2 crystals and investigated the variability of electrical properties of Ti contacts. The current-voltage measurement indicated two distinct contact behaviors of TFTs, which were fabricated by the same processes and have the same device structures. The current-voltage measurement at different temperatures further revealed two distinct transport behaviors: while a group of TFTs showed a phonon-scattering dominated transport, the other group of TFTs showed a thermally activated transport. Our results deliver experimental evidence of the variability of Ti contacts on MoS2 highlighting the importance of understanding the variability of electronic properties of naturally occurring MoS2 for further investigation. References 1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Nat. Nanotechnol., vol. 7, p. 699 (2012). 2. I. Popov, G. Seifert, D. Tomanek, Phys. Rev. Lett. 108, 156802, (2012). 3. S. Das, H. Y. Chen, A. V. Penumatcha, J. Appenzeller, Nano Lett. 13, 100, (2013). 4. S. McDonnell, R. Addou, C. Buie, R. M. Wallace, and C. L. Hinkle, ACS Nano, DOI:10.1021/nn5000449 (2014). |
| 저자 | 김성열, 박선영, 최웅 |
| 소속 | 국민대 |
| 키워드 | MoS2; Transition Metal Dichalcogenides; Metal Contact |
