| 초록 |
We have successfully synthesized novel N-type organic field-effect transistors (OFETs) based on indenofluorene core with high efficiency and excellent stability. The number of fluorine substituents in the indenofluorene core was changed to the side group. IFN-dione, MonoF-IF-dione, DiF-IF-dione, and TriF-IF-dione. The electron mobility of TriF-IF-dione FETs dropped from 0.15 to 0.07 for 40 minutes, but remained almost unchanged over the following 3 months. In conclusion, this study has synthesized very stable N-type OFETs, and based on this technology, it is possible to synthesize various N-type materials later. |
