| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Morphology and Electrical Properties Changes of P3HT filmaccording to the Cooling Rate after Thermal treatment |
| 초록 |
Previous studies have paid attention to the heating procedure of annealing process in order to improve the crystallinity of the Poly(3-hexylthiophene) (P3HT) thin film. But in this study we focuses on the cooling procedure in annealing process. In the thermal annealing process, the P3HT thin film is melted by heating at high temperature, and then the recrystallization of the P3HT thin film takes place by the cooling process. Thus the cooling rate at which the P3HT film is returned to room temperature is more important to improving the electronic properties of field-effect transistors. The rapid quenching hampers the crystallization of the P3HT thin film, on the other hand the slow cooling treatment improves the crystallinity of the P3HT thin film with stronger pi-interaction. In this study the correlation between the thin films’ structural features and the electrical properties of the films guided the identification of an appropriate annealing temperature and cooling rate. |
| 저자 |
김혜수, 김신애, 나진영, 박영돈
|
| 소속 |
인천대 |
| 키워드 |
P3HT; Cooling rate; Annealing
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| E-Mail |
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