| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
OLED 소재 및 소자기술 동향(분자전자 부문위원회) |
| 제목 |
Ambipolar Field-Effect Transistors Based on Fullerene Polymers |
| 초록 |
Organic and polymeric semiconducting materials compatible with solution processing techniques can eliminate the need for expensive lithography and vacuum deposition steps necessary for silicon-based materials. Solution processing also allows flexible plastics or fabrics to be used in conjunction with methods such as spin-coating, stamping, or ink-jet printing. Here, we demonstrate a high performance, ambipolar fullerene-based polymeric field-effect transistors (FETs), which are soluble and stable with both hole and electron mobilities. Ambipolar semiconductors are useful for complementary-like inverters without using advanced patterning techniques to selectively deposit n- and p-channel materials. |
| 저자 |
김신태1, 백남섭2, 이광섭3, 김태동1
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| 소속 |
1한남대, 2한국전자통신(연), 3융합기술연구부문 |
| 키워드 |
Field-Effect Transistors; Fullerene Polymers
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| E-Mail |
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