| 초록 |
Among the metal oxide semiconductors, indium tin oxide is attractive. But indium is rare in Earth’s crust and toxic. On the other hands, the methods to fabricate the transistors are pulsed laser deposition, atomic layer deposition, etc. These methods require high vacuum, and high temperature conditions. In this work, we used zinc tin oxides due to their abundance and they can be used to flexible devices. And also di-ketone ligands with vinyl moiety were used for photosensitivity. The solution process was used, which does not require high vacuum and high temperature conditions. We used photo-initiator for 365 nm irradiation. When the vinyl moiety is exposed by I-line, cross-linking is generated. Then, cross-linking makes zinc tin oxide compound insoluble in the developer and patterns can be made on the substrate. Finally, the low temperature solution-processed amorphous oxide thin film transistors were demonstrated using the photosensitive sol-gel process. |
