| 초록 |
Zirconium siloxane resin was synthesized by a sol-gel reaction and was characterized further for OTFT application. The synthesized resin with long-term stability can be easily processed to produce a smooth coating on Si substrate. The dielectric constant of the film increased from 2.46 to 4.67 according to the zirconium content. Also, a low leakage current density of 10-6-10-7 A/cm2 at 2MV/cm was obtained. Organic thin film transistors with zirconium siloxane gate film were found to exhibit good performances with a low operating voltage, a high on/off ratio (~105), and a low hysteresis of hybrid gate insulator based on OTFT characteristics. |
