| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Optical Properties of InAs QDs with InGaAs/GaAs Strained Superlattices. |
| 초록 |
InAs QDs were grown on the strained superlattices, GaAs(2nm)/InxGa1-xAs(2nm)10 with x= 0.1, 0.32 and 0.52 and capped with same strained superlattices. Their optical properties related to the integrated PL intensity and peak positions were investigated with different temperature ranging from 11 ~ 325 K. As the In composition of the strained superlattice layer increases, the PL peak energy of the QDs decreases resulting in the redshift in emission wavelength and the PL intensity also decreases indicating the effective strain relaxation caused by the strained superlattice structure. The effects of the rapid thermal annealing (RTA) on the structural and optical properties of the QDs with PL measurements were also investigated. While the increase in the integrated PL intensity was observed for the samples annealed at temperature up to 800oC, a decrease in the PL intensity was shown at higher temperatures. The significant narrowing of FWHM and blueshift of the PL peak of the InAs QDs with increase in annealing temperature were observed. |
| 저자 |
김종호1, 박호진2, 김도엽1, 김민수2, 김군식1, 김진수2, 김종수1, 손정식2, 류혁현1, 조관식2, 전민현3, 임재영4
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| 소속 |
1인제대, 2나노매뉴팩쳐링 (연), 3전북대, 4고등광기술(연) |
| 키워드 |
Optical Properties; InAs; Quatum Dots; InGaAs/GaAs; Superlattices
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| E-Mail |
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