| 초록 |
New organic-inorganic hybrid polymers for next-generation electronic devices were synthesized by sol-gel reaction of organically modified silanes. Patternability and strong etch resistance could be obtained by the organic-inorganic duality of organosilicate polymers. Similar to poly(hydridosilsesquioxane) (PHSQ), which is well known as a good e-beam resist, negative-type patterns of sub-30 nm level were achieved by direct e-beam crosslinking of functionalized organic groups of resulting organosilicate polymers. The sensitivity and resolution of organosilicate polymers were controlled by variation of reaction conditions and e-beam crosslinkable organic functional groups which increased the glass transition temperature of resulting polymers. As a result, they showed much better sensitivity and similar resolution level at quite lower dose than commercial PHSQ. |
