학회 | 한국재료학회 |
학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
권호 | 22권 1호 |
발표분야 | C. 에너지 재료 분과 |
제목 | The Relationships between Oxygen defects and Cell efficiency in Single crystalline Solar cells |
초록 | Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied[1]. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication[2]. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. Because oxygen precipitation is made by silicon, oxygen and vacancy, concentration of oxygen precipitation is dependent on interstitial oxygen concentration. Oxygen precipitation in bulk silicon is known that they have a bad effect on solar cell efficiency. The oxygen precipitates can affect the recombination lifetimes since they become combination centers for minority carriers[3]. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. In High [Oi] ingot, oxygen precipitation significant increase in comparison with Low[Oi] ingot. These results suggest that oxygen precipitation negatively affect solar cell efficiency. Moreover, to find out Oxygen precipitation-free range, we research changes of △[Oi] and BMD in various initial Oi concentrations. As a result, BMD is closed to 0 ea/mm2 below 14.5 ppma of initial [Oi], and △[Oi] is closed to 0 ppma below 11 ppma of initial [Oi]. We have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD). REFERENCES 1. R.C Newman, J. Phys.: Condens. Matter 12 (2000) R335 2. W. Huber and M. Pagani, J. Electrochem Soc. 137 (1990) 3210 3. Lin Chen et al, Solar Energy Materials & Solar Cells 95(2011)3148–3151 |
저자 | 이송희, 한영식, 남우석, 서경호, 백성선 |
소속 | 웅진에너지 |
키워드 | 태양전지; 단결정 실리콘; 실리콘 결정결함; 산소석출결함 |