| 초록 |
One of the recent hottest devices is flexible devices and many researches used polymer substrates for fabricating flexible devices. However, some of polymer substrates have problems in the usage of conventional chemical deposition technique because of chemical or thermal deformation. And the graphene, one of the recent hottest materials because of its excellent electrical properties, has difficult in depositing other materials on graphene because of its inert surface. So we investigated a new fabrication process of physically transferrable Al2O3 nanosheet by using atomic layer deposition (ALD) process. Al2O3 thin film was deposited using trimethylaluminium (TMA) and H2O by thermal ALD process on the water soluble polymer/silicon substrate. By soaking the sample in the water, Al2O3 nanosheet floated on water and it was scooped up by other substrate. To evaluate electrical characteristics of Al2O3 nanosheet, we fabricated the metal-oxide-silicon (MOS) capacitor using transferred Al2O3 nanosheet and its dielectric constant is 9.12. Its interface defect density (Dit) shows 1.69 x 1011 cm-2eV-1 and its leakage current density at -1 MV/cm is 5.49x10-7 A/cm2. |
