| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 가을 (10/06 ~ 10/07, 김대중 컨벤션센터) |
| 권호 |
36권 2호 |
| 발표분야 |
유기전자소자용 소재 및 소자(분자전자소재 부문위원회) |
| 제목 |
POSS-based photo-curable insulating materials for organic thin film transistors. |
| 초록 |
Organic materials have been extensively investigated as an electronic material for thin film transistor (TFT) devices. Organic materials offer strong promise in terms of properties, processing and cost effectiveness and they can be used in flat panel displays, smart cards and large area electronic applications. Organic field-effect transistors (OFETs) consist of a gate insulator and an organic semiconductor. Organic semiconductors and metals required for OFETs were improved considerably. However, in the case of dielectric, not many researchers have been done. Here we synthesized polyhedral oligomeric silsesquioxane (POSS)-based insulating materials with photo-curalble functional groups. The insulators were curable by UV irradiation. We fabricated MIM device of ITO/insulator/Au to measure electrical properties such as current density, capacitance. We fabricated an organic thin film transistor with pentacene as the p-type material and the photo-curable POSS derivatives as an insulator. |
| 저자 |
김윤태1, 황도훈1, 노정균2, 이창희2
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| 소속 |
1부산대, 2서울대 |
| 키워드 |
OFTF; photo-curable; dielectric; insulator
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| E-Mail |
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