| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Highly Luminescent In(Zn)P/ZnS Core-Shell Quantum Dots for Display Applications |
| 초록 |
Heavy metal based quantum dots (QDs) as the current workhorse has been extensively investigated due to their good photostability, high quantum yield (QY), and also an emission wavelength tenability. However, these are environmentally restricted and thus has little future in industry. Group III-V semiconductors are attractive as they are less toxic than the II-VI analogues and show comparable luminescence properties with II-VI semiconductors. Among III-V semiconductors, InP has attracted much interest as a direct gap material with a band gap of 1.27 eV, which is suitable for getting visible emission in the quantum confinement regime. Therefore, it can be useful to make In(Zn)P/ZnS core/shell semiconducting nanocrystal which is modified structure of InP quantum dots. In this presentation we report some progress about the synthesis of In(Zn)P/ZnS core/shell type NCs in various emission range in combination with various techniques to increase their quantum yields. |
| 저자 |
정주형1, 등학성2, 전수민2, 디박2, 이광섭2
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| 소속 |
1대전 한남대, 2한남대 |
| 키워드 |
quantum dots; quantum yield; display
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| E-Mail |
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